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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1516 DESCRIPTION *With TO-220 package *Low collector saturation voltage APPLICATIONS *For medium power amplifer applicatons PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 35 35 5 1.5 3.0 10 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ,IB=0 IE=1mA ,IC=0 IC=1A; IB=0.1A IC=1A; IB=0.1A VCB=35V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=0.2A ; VCE=10V 60 110 MIN 35 5 TYP. 2SC1516 MAX UNIT V V 2.0 1.5 20 20 200 V V A A MHz hFE Classifications B 60-120 C 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1516 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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